 Название: Device Circuit Co-Design Issues in FETs
Автор: Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi
Издательство: CRC Press
Год: 2024
Страниц: 280
Язык: английский
Формат: pdf (true)
Размер: 42.5 MB
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry.
Our daily lifestyle is a witness to the importance of CMOS science and technology. CMOS changes our daily life. Nearly all modern industries and other cutting-edge developments including Artificial Intelligence (AI), autonomous systems, 5G communications, and quantum computing rely on it. The world population’s use of electronics, communications, computers, and information technology (IT) applications has increased dramatically in recent years. Users can easily be identified in most places in our daily activities. Mobile technology is the best example of its applications. Scaling is the main and most important feature of CMOS devices. This feature of CMOS devices has continuously helped to develop various types of circuits and systems for our daily life uses, medical sciences, aerospace, and military-based development over the past four decades. Only due to the scaling of conventional MOSFET, various types of circuits and systems have developed for mankind’s better life. The journey of scaling MOSFET technology is continuous and has reached the 5 nm range.
This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.
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Device Circuit Co-Design Issues in FETs 
