This book exhibits a unique way of explaining nanomaterials and devices and analyzing their design parameters to meet the sub-nanoregime challenges for low-power chip design. Since process variability, device sizing, and power supply scaling are ongoing challenges in very large-scale integration (VLSI) circuit designs, this book highlights the conventional and novel nanomaterials, devices and circuits, leakage current mitigation techniques, and other important trade-offs along with exhaustive analysis. More focus has been placed throughout the book on various trade-offs for high-speed and low-power VLSI devices and circuits co-design.
Nanoelectronic devices such as double-gate metal–oxide–semiconductor field-effect transistors (MOSFETs), fin field-effect transistors (FinFETs), nanowires, carbon nanotube field-effect transistors (CNTFETs), tunnel field-effect transistors (TFETs), ferroelectric field-effect transistors (FeFETs), gate-all-around (GAA) FETs, high-electron-mobility transistors (HEMTs), and spin-based devices are proposed and available in the literature for chip design. The study of these devices is important in sectors whose applications in chip design have a huge impact on bringing revolutionary advancements in nanoelectronic devices, circuits, and systems due to improved electronic properties of the nanoscale semiconductor devices. Currently, the knowledge and resources for the fabrication of these nanoelectronic devices are also available, as its fabrication flow is similar to conventional MOSFET. It is predicted by the International Technology Roadmap for Semiconductors (ITRS) that with the advancement of technology, the conventional fabrication flow can be used for nanoelectronic devices.
This book:
Discusses advanced nano-semiconductor devices such as FinFET, nanowires, tunnel field-effect transistors, carbon nanotube field-effect transistors, and high-electron-mobility transistors Presents high-performance semiconductor devices at nanoscale technology nodes for the analysis of quantum effects and their impact on circuits and systems Covers power dissipation and reduction techniques for high-performance devices Explains both silicon and non-silicon devices for various applications like digital logic and analog/radio frequency applications Examines the difficulties and practical design approaches for extremely low-power analog-integrated circuits
It is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology.
Скачать Nanoelectronics: Materials to Chips Design
Навигация
Вход на сайт
Реклама
Nanoelectronics: Materials to Chips Design 
