Название: Multi-run Memory Tests for Pattern Sensitive Faults Автор: Ireneusz Mrozek Издательство: Springer Год: 2018 Формат: PDF Размер: 2 Мб Язык: английский / English
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
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Multi-run Memory Tests for Pattern Sensitive Faults 
